PTFA180701E ptfa180701f all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! data sheet 1 of 11 rev. 03.2, 2016-06-21 description the PTFA180701E and ptfa180701f are 70-watt ldmos fets designed for gsm and gsm edge power amplifier applications in the 1805 mhz to 1880 mhz band. features include input and output matching, and thermally- enhanced packages with slotted or earless flanges. manufactured with infineon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. features ? thermally-enhanced packages, pb-free and rohs-compliant ? broadband internal matching ? typical edge performance - average output power = 44 dbm - gain = 16.5 db - efficiency = 40.5% - evm = 2.0% ? typical cw performance - output power at p?1db = 72 w - gain = 15.5 db - efficiency = 59% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, l ow hci drift ? capable of handling 10:1 vswr @ 28 v, 70?w?(cw) output power rf characteristics edge measurements (not subject to production test?verified by design/characterization in infineon test fixture) v dd = 28 v, i dq = 550 ma, p out = 44 dbm, ? = 1836.6 mhz characteristic symbol min typ max unit error vector magnitude evm rms ? 2.0 ? % modulation spectrum @ 400 khz acpr ? ?62 ? dbc @ 600 khz acpr ? ?76 ? dbc gain g ps ? 16.5 ? db drain efficiency h d ? 40.5 ? % thermally-enhanced high power rf ldmos fets 70 w, 1805 ? 1880 mhz *see infineon distributor for future availability. edge evm performance v dd = 28 v, i dq = 550 ma, ? = 1836.6 mhz 0 1 2 3 4 5 30 32 34 36 38 40 42 44 46 output power, avg. (dbm) evm rms (avg. %) . 0 10 20 30 40 50 drain efficiency (%) evm efficiency PTFA180701E package h-36265-2 ptfa180701f package h-37265-2
data sheet 3 of 11 rev. 03.2, 2016-06-21 PTFA180701E ptfa180701f three-carrier cdma2000 performance v dd = 28 v, i dq = 550 ma, ? = 1840 mhz 0 10 20 30 40 50 60 30 32 34 36 38 40 42 44 46 output power, avg. (dbm) drain efficiency (%) -70 -65 -60 -55 -50 -45 -40 adj. ch. power ratio (dbc) alt up acp up efficiency acp low edge evm and modulation spectrum vs. quiescent current v dd = 28 v, ? = 1836.6 mhz, p out = 44 dbm 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.40 0.50 0.60 0.70 quiescent current (a) evm rms (avg. %) . -90 -80 -70 -60 -50 -40 -30 -20 -10 modulation spectrum (dbc) evm 400 khz 600 khz typical performance (measurements taken in production test fixture) intermodulation distortion vs. output power v dd = 28 v, i dq = 550 ma, ? = 1840 mhz, tone spacing = 1 mhz -60 -55 -50 -45 -40 -35 -30 -25 30 35 40 45 50 output power, pep (dbm) imd (dbc) 0 10 20 30 40 50 60 70 efficiency (%) 3rd order 7th 5th efficiency edge modulation spectrum performance v dd = 28 v, i dq = 550 ma, ? = 1836.6 mhz -90 -80 -70 -60 -50 -40 30 32 34 36 38 40 42 44 46 output power (dbm) modulation spectrum (dbc) 0 10 20 30 40 50 drain efficiency (%) efficiency 400 khz 600 khz
data sheet 4 of 11 rev. 03.2, 2016-06-21 PTFA180701E ptfa180701f im3 vs. output power at selected biases v dd = 28 v, ? 1 = 1849, ? 2 = 1840 mhz -60 -55 -50 -45 -40 -35 -30 -25 -20 26 30 34 38 42 46 output power, avg. (dbm) imd (dbc) i dq = 825 ma i dq = 275 ma i dq = 550 ma power sweep v dd = 28 v, ? = 1880 mhz 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 35 37 39 41 43 45 47 49 output power (dbm) power gain (db) i dq = 825 ma i dq = 275 ma i dq = 550 ma broadband test fixture performance (p?1db) v dd = 28 v, i dq = 550ma 14 15 16 17 18 19 1760 1800 1840 1880 1920 frequency (mhz) gain (db) 20 30 40 50 60 70 output power (dbm) & efficiency (%) gain drain efficiency output power cw broadband performance v dd = 28 v, i dq = 550 ma, p out = 43 dbm 20 25 30 35 40 45 50 55 1760 1780 1800 1820 1840 1860 1880 1900 1920 frequency (mhz) efficiency (%) -30 -20 -10 0 10 20 30 40 gain, return loss (db) gain return loss efficiency typical performance (cont.)
data sheet 5 of 11 rev. 03.2, 2016-06-21 PTFA180701E ptfa180701f gain & efficiency vs. output power v dd = 28 v, i dq = 550 ma, ? = 1880 mhz 12 13 14 15 16 17 18 19 20 0 10 20 30 40 50 60 70 80 output power (w) gain (db) 10 16 22 28 34 40 46 52 58 64 drain efficiency (%) efficiency gain output power (p?1db) vs. drain voltage i dq = 550 ma, ? = 1880 mhz 46 47 48 49 50 24 26 28 30 32 drain voltage (v) output power (dbm) typical performance (cont.) is-95 cdma performance v dd = 28 v, i dq = 550 ma, ? = 1840 mhz 0 5 10 15 20 25 30 35 40 45 30 32 34 36 38 40 42 44 46 output power, avg. (dbm) drain efficiency (%) -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 adj. ch. power ratio (dbc) efficiency t case = 25c t case = 90c acp ? c ? 0.75 mhz acpr ? c + 1.98 mhz bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.15 a 0.44 a 0.73 a 1.10 a 2.20 a 3.30 a 4.41 a 5.51 a
PTFA180701E ptfa180701f data sheet 6 of 11 rev. 03.2, 2016-06-21 frequency z source w z load w mhz r jx r jx 1760 7.9 ?10.3 4.6 ?1.4 1800 7.4 ?10.0 4.5 ?1.1 1840 7.0 ?9.7 4.5 ?0.8 1880 6.5 ?9.3 4.4 ?0.3 1920 6.1 ?8.9 4.3 ?0.1 see next page for circuit information broadband circuit impedance 0.1 0.3 0.2 0 . 1 0 . 1 0 . 2 < - - - w a v e l 0 . 0 z source 1760 mhz 1920 mhz z load 0 .1 0 . 0 1760 mhz 1920 mhz z 0 = 50 w z source z load g s d
PTFA180701E ptfa180701f data sheet 7 of 11 rev. 03.2, 2016-06-21 rf_in a 1 8 0 7 01 e f _ s c h rf_out r3 2k v c3 0.001f c2 0.001f q1 bcp56 r2 1.3k v qq1 lm7805 c1 0.001f r5 10 v r4 2k v r1 1.2k v c8 10pf l 1 l6 r8 10 v dut c6 0.01f c5 0.1f c4 10f 35v c7 10pf r7 1k v r6 1k v c9 10pf c10 1f c11 100f 50v c12 1.2pf c13 10pf l 2 l3 l4 l5 l8 l9 l13 l 14 l15 l7 l12 l10 l11 v dd reference circuit reference circuit schematic for 1840 mhz circuit assembly information dut PTFA180701E or ptfa180701f ldmos transistor pcb 0.76 mm [.030"], e r = 3.48 rogers, ro4350 1 oz. copper microstrip electrical characteristics at 1840 mh z 1 dimensions: l x w ( mm) dimensions: l x w (in.) l1 0.034 l , 50.0 3.33 x 1.70 0.131 x 0.067 l2 0.149 l , 50.0 14.68 x 1.70 0.578 x 0.067 l3 0.014 l , 10.2 1.27 x 13.28 0.050 x 0.523 l4 0.044 l , 7.1 3.86 x 19.61 0.152 x 0.772 l5 0.014 l , 7.1 1.27 x 19.61 0.050 x 0.772 l6 0.012 l , 78.0 1.22 x 0.74 0.048 x 0.029 l7 0.115 l , 65.0 11.51 x 1.07 0.453 x 0.042 l8 0.016 l , 8.9 1.37 x 15.34 0.054 x 0.604 l9 0.090 l , 8.9 8.13 x 15.34 0.320 x 0.604 l 10, l 11 0.020 l , 21.8 1.91 x 5.36 0.075 x 0.211 l 12 0.162 l , 64.0 16.18 x 1.12 0.637 x 0.044 l 13 0.042 l , 50.0 4.11 x 1.70 0.162 x 0.067 l 14 0.074 l , 50.0 7.29 x 1.70 0.287 x 0.067 l 15 0.032 l , 50.0 3.12 x 1.70 0.123 x 0.067 1 electrical characteristics are rounded
PTFA180701E ptfa180701f data sheet 8 of 11 rev. 03.2, 2016-06-21 qq1 c3 c1 r2 c2 r1 r5 r3 c5 r8 r6 r7 c7 c10 c6 c9 c12 c11 c8 c13 a180701_01 ro4350 a180701ef_assy lm rf_in rf_out v dd r4 c4 q1 reference circuit (cont.) reference circuit assembly diagram* (not to scale) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key 399-1655-2-nd c5 capacitor, 0.1 f digi-key pcc104bct-nd c6 capacitor, 0.01 f atc 200b 103 c7, c9 ceramic capacitor, 10 pf atc 100b 100 c8, c13 ceramic capacitor, 10 pf atc 100a 100 c10 ceramic capacitor, 1 f digi-key 445-1411-1-nd c11 electrolytic capacitor, 100 f, 50 v digi-key pce3718ct-nd c12 ceramic capacitor, 1.2 pf atc 100b 1r2 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor 1.3 k-ohms digi-key p1.3kgct-nd r3 chip resistor 2 k-ohms digi-key p2kect-nd r4 potentiometer 2 k-ohms digi-key 3224w-202etr-nd r5, r8 chip resistor 10 ohms digi-key p10ect-nd r6, r7 chip resistor 1 k-ohms digi-key p1kect-nd *gerber files for this circuit available on request.
PTFA180701E ptfa180701f data sheet 9 of 11 rev. 03.2, 2016-06-21 diagram notes?unless otherwise specified: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch] package outline specifications package h-36265-2 find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products 20.31 [.800] 10.160.25 [.400.010] flange 9.78 [.385] 2x 7.11 [.280] 2x 7.11 [.280] 15.23 [.600] 4x r1.52 [r.060] c l c l (45 x 2.03 [.080]) s d g lid 10.160.25 [.400.010] 0.0381 [.0015] -a- 3.560.38 [.140.015 1.02 [.040] sph 1.57 [.062] 2007-11-16_h-36+37265_pos.vsd_h-36265-2 2x r1.60 [r.063] 15.340.51 [.604.020] 2.590.51 [.102.020]
PTFA180701E ptfa180701f data sheet 10 of 11 rev. 03.2, 2016-06-21 package outline specifications (cont.) package h-37265-2 diagram notes?unless otherwise specified: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products 071119_h-36+37265_pos_h-37265-2 (45 x 2.03 [.080]) 2.590.51 [.102.020] s d g lid 10.160.25 [.400.010] flange 10.16 [.400] 2x 7.11 [.280] lid 10.160.25 [.400.010] 10.16 [.400] 1.02 [.040] 3.56.38 [.140.015] sph 1.57 [.062] 10.16 [.400] 15.34.51 [.604.020] flange 4x r0.63 [r.025] max | 0.025 [.001]| -a- c l c l
data sheet 11 of 11 rev. 03.2, 2016-06-21 ptf180701e/f confidential, limited internal distribution revision history: 2016-06-21 data sheet previous version: 2009-02-20, data sheet page subjects (major changes since last revision) 2 update ordering information we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international goldmos ? is a registered trademark of infineon technologies ag. edition 2016-06-21 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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